IRLML2502GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7.5 ns

Power Dissipation :

1.25W

Power Dissipation-Max :

1.25W Ta

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

12V

Width :

1.397mm

Vgs (Max) :

±12V

JESD-609 Code :

e3

ECCN Code :

EAR99

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Resistance :

45mOhm

Factory Lead Time :

10 Weeks

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Additional Feature :

High Reliability

Number of Pins :

3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Length :

3.0226mm

Mounting Type :

Surface Mount

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

54 ns

Continuous Drain Current (ID) :

4.2A

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 15V

Terminal Position :

Dual

Published :

2008

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

26 ns

Height :

1.016mm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Mount :

Surface Mount

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.2A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Number of Terminations :

3