IRLHS6376TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Series :

HEXFET®

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Rise Time :

11ns

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Max Power Dissipation :

1.5W

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

11 ns

Continuous Drain Current (ID) :

3.6A

Turn On Delay Time :

4.4 ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 4.5V

Element Configuration :

Dual

Package / Case :

6-VDFN Exposed Pad

REACH SVHC :

No SVHC

Published :

2011

Number of Pins :

6

Factory Lead Time :

12 Weeks

Number of Terminations :

6

Nominal Vgs :

800 mV

Rds On (Max) @ Id, Vgs :

63m Ω @ 3.4A, 4.5V

Threshold Voltage :

800mV

Mount :

Surface Mount

Base Part Number :

IRLHS6376

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.082Ohm

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

3.4A

Vgs(th) (Max) @ Id :

1.1V @ 10μA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

1.5W

Number of Elements :

2

Fall Time (Typ) :

9.4 ns

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V