IRLH7134TR2PBF
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- Mfr.Part #
- IRLH7134TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 26A 8PQFN
- Stock
- 32,727
- In Stock ：
- 32,727
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3720pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 26A Ta 85A Tc
- Drain to Source Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Input Capacitance :
- 3.72nF
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 2.5V @ 100μA
- Power Dissipation :
- 3.6W
- Radiation Hardening :
- No
- Resistance :
- 3.3MOhm
- Continuous Drain Current (ID) :
- 26A
- Lead Free :
- Lead Free
- Threshold Voltage :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 4.5V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 13 ns
- Max Power Dissipation :
- 3.6W
- Drain to Source Voltage (Vdss) :
- 40V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.3mOhm @ 50A, 10V
- Number of Pins :
- 8
- Published :
- 2012
- Series :
- HEXFET®
- FET Type :
- N-Channel
- Supplier Device Package :
- 8-PQFN (5x6)
- Packaging :
- Cut Tape (CT)
- Rds On Max :
- 3.3 mΩ
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 16V
- Package / Case :
- 8-PowerTDFN
- Drain to Source Resistance :
- 3.3MOhm
- Turn On Delay Time :
- 21 ns
- Rise Time :
- 75ns
- Datasheets
- IRLH7134TR2PBF
N-Channel Cut Tape (CT) 3.3mOhm @ 50A, 10V 3720pF @ 25V 58nC @ 4.5V 40V 8-PowerTDFN
IRLH7134TR2PBF Overview
A device's maximum input capacitance is 3720pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3.3mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).
IRLH7134TR2PBF Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 3.3mOhm
a threshold voltage of 1V
a 40V drain to source voltage (Vdss)
IRLH7134TR2PBF Applications
There are a lot of Infineon Technologies
IRLH7134TR2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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