IRLH7134TR2PBF
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- Mfr.Part #
- IRLH7134TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 26A 8PQFN
- Stock
- 32,727
- In Stock ：
- 32,727
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 26A
- Supplier Device Package :
- 8-PQFN (5x6)
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 4.5V
- Element Configuration :
- Single
- Input Capacitance :
- 3.72nF
- Fall Time (Typ) :
- 13 ns
- Number of Pins :
- 8
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 3.3MOhm
- Max Power Dissipation :
- 3.6W
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Threshold Voltage :
- 1V
- Turn On Delay Time :
- 21 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Vgs(th) (Max) @ Id :
- 2.5V @ 100μA
- Current - Continuous Drain (Id) @ 25°C :
- 26A Ta 85A Tc
- Drain to Source Breakdown Voltage :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3720pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 3.3mOhm @ 50A, 10V
- Power Dissipation :
- 3.6W
- Gate to Source Voltage (Vgs) :
- 16V
- Radiation Hardening :
- No
- Rds On Max :
- 3.3 mΩ
- Mounting Type :
- Surface Mount
- Resistance :
- 3.3MOhm
- Rise Time :
- 75ns
- REACH SVHC :
- No SVHC
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 18 ns
- Packaging :
- Cut Tape (CT)
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Published :
- 2012
- Datasheets
- IRLH7134TR2PBF
N-Channel Cut Tape (CT) 3.3mOhm @ 50A, 10V 3720pF @ 25V 58nC @ 4.5V 40V 8-PowerTDFN
IRLH7134TR2PBF Overview
A device's maximum input capacitance is 3720pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3.3mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).
IRLH7134TR2PBF Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 3.3mOhm
a threshold voltage of 1V
a 40V drain to source voltage (Vdss)
IRLH7134TR2PBF Applications
There are a lot of Infineon Technologies
IRLH7134TR2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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