IRLHM620TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

900μm

Drain to Source Voltage (Vdss) :

20V

Max Power Dissipation :

2.7W

Number of Channels :

1

Min Operating Temperature :

-55°C

Power Dissipation :

2.7W

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

26A Ta 40A Tc

Width :

3.3mm

Turn On Delay Time :

7.5 ns

Rise Time :

25ns

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

3620pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

57 ns

Recovery Time :

62 ns

Gate to Source Voltage (Vgs) :

12V

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Number of Elements :

1

Series :

HEXFET®

Input Capacitance :

3.62nF

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Mount :

Surface Mount

Supplier Device Package :

PQFN (3x3)

Max Junction Temperature (Tj) :

150°C

Published :

2013

Rds On (Max) @ Id, Vgs :

2.5mOhm @ 20A, 4.5V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Package / Case :

8-VQFN Exposed Pad

Nominal Vgs :

800 mV

Drain to Source Resistance :

1.8MOhm

Length :

3.2766mm

Threshold Voltage :

800mV

Rds On Max :

2.5 mΩ

Fall Time (Typ) :

37 ns

Vgs(th) (Max) @ Id :

1.1V @ 50μA

Continuous Drain Current (ID) :

26A

FET Type :

N-Channel