IRLH5030TRPBF
- Mfr.Part #
- IRLH5030TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 13A/100A 8PQFN
- Stock
- 8,715
- In Stock :
- 8,715
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Pulsed Drain Current-Max (IDM) :
- 400A
- Power Dissipation :
- 3.6W
- Turn On Delay Time :
- 21 ns
- Drain to Source Breakdown Voltage :
- 100V
- Vgs (Max) :
- ±16V
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 16V
- Number of Terminations :
- 5
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-N5
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 50A, 10V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 41 ns
- Power Dissipation-Max :
- 3.6W Ta 156W Tc
- Continuous Drain Current (ID) :
- 100A
- Width :
- 5.15mm
- Threshold Voltage :
- 2.5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- HEXFET®
- Rise Time :
- 72ns
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Nominal Vgs :
- 2.5 V
- Turn-Off Delay Time :
- 41 ns
- Resistance :
- 9.9mOhm
- Length :
- 6.1468mm
- Case Connection :
- DRAIN
- Height :
- 990.6μm
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 230 mJ
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.5V @ 150μA
- Published :
- 2010
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 100A Tc
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5185pF @ 50V
- Package / Case :
- 8-PowerVDFN
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- IRLH5030TRPBF

N-Channel Tape & Reel (TR) 9m Ω @ 50A, 10V ±16V 5185pF @ 50V 94nC @ 10V 8-PowerVDFN
IRLH5030TRPBF Description
IRLH5030TRPBF is a 100V Single N-Channel StrongIRFET? Power MOSFET in a PQFN 5x6 package. The Infineon IRLH5030TRPBF is optimized for low RDS(on) and high current capability. The MOSFET IRLH5030TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
IRLH5030TRPBF Features
-
Industry-standard surface-mount power package
-
Product qualification according to JEDEC standard
-
Silicon optimized for applications switching below <100 kHz
-
Softer body-diode compared to previous silicon generation
-
Wide portfolio available
IRLH5030TRPBF Applications
-
Secondary Side Synchronous Rectification
-
Inverters for DC Motors
-
DC-DC Brick Applications
-
Boost Converters
-
SMPS
-
UPS
-
Solar power inverter
-
Battery-powered applications
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