IRLH5030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.6W Ta 156W Tc

Rise Time :

72ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 50A, 10V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Width :

5.15mm

Number of Pins :

8

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

13A Ta 100A Tc

Avalanche Energy Rating (Eas) :

230 mJ

Vgs(th) (Max) @ Id :

2.5V @ 150μA

JESD-30 Code :

R-PDSO-N5

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

41 ns

Packaging :

Tape and Reel (TR)

Height :

990.6μm

Turn On Delay Time :

21 ns

Turn-Off Delay Time :

41 ns

Package / Case :

8-PowerVDFN

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

5

Continuous Drain Current (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Terminal Position :

Dual

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Length :

6.1468mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

400A

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Threshold Voltage :

2.5V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

5185pF @ 50V

Vgs (Max) :

±16V

Power Dissipation :

3.6W

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Nominal Vgs :

2.5 V

Resistance :

9.9mOhm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)