IRLH5030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

400A

Power Dissipation :

3.6W

Turn On Delay Time :

21 ns

Drain to Source Breakdown Voltage :

100V

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

16V

Number of Terminations :

5

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PDSO-N5

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

9m Ω @ 50A, 10V

FET Type :

N-Channel

Fall Time (Typ) :

41 ns

Power Dissipation-Max :

3.6W Ta 156W Tc

Continuous Drain Current (ID) :

100A

Width :

5.15mm

Threshold Voltage :

2.5V

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Rise Time :

72ns

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

2.5 V

Turn-Off Delay Time :

41 ns

Resistance :

9.9mOhm

Length :

6.1468mm

Case Connection :

DRAIN

Height :

990.6μm

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

230 mJ

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

13A Ta 100A Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

5185pF @ 50V

Package / Case :

8-PowerVDFN

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE