IRLH5030TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

41 ns

Rds On (Max) @ Id, Vgs :

9m Ω @ 50A, 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A Ta 100A Tc

Height :

990.6μm

ECCN Code :

EAR99

Turn-Off Delay Time :

41 ns

Width :

5.15mm

Rise Time :

72ns

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

100A

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-PowerVDFN

Nominal Vgs :

2.5 V

Power Dissipation :

3.6W

Length :

6.1468mm

Threshold Voltage :

2.5V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

230 mJ

Transistor Application :

SWITCHING

Published :

2010

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

400A

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±16V

Gate to Source Voltage (Vgs) :

16V

Resistance :

9.9mOhm

JESD-30 Code :

R-PDSO-N5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

5

Radiation Hardening :

No

Turn On Delay Time :

21 ns

Input Capacitance (Ciss) (Max) @ Vds :

5185pF @ 50V

Series :

HEXFET®

Power Dissipation-Max :

3.6W Ta 156W Tc

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON