IRLH5034TR2PBF
- Mfr.Part #
- IRLH5034TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A 5X6 PQFN
- Stock
- 4,224
- In Stock :
- 4,224
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 156W
- Turn On Delay Time :
- 21 ns
- Width :
- 5.1562mm
- Rise Time :
- 54ns
- Nominal Vgs :
- 1 V
- Current - Continuous Drain (Id) @ 25°C :
- 29A Ta 100A Tc
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 21 ns
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerVDFN
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 31 ns
- Recovery Time :
- 38 ns
- Drain to Source Resistance :
- 2.7MOhm
- Height :
- 810μm
- Gate to Source Voltage (Vgs) :
- 16V
- Published :
- 2013
- Input Capacitance :
- 4.73nF
- Drain to Source Breakdown Voltage :
- 40V
- Packaging :
- Cut Tape (CT)
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 100A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 3.6W
- Threshold Voltage :
- 1V
- RoHS Status :
- RoHS Compliant
- Length :
- 5mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4730pF @ 25V
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 40V
- Rds On Max :
- 2.4 mΩ
- Vgs(th) (Max) @ Id :
- 2.5V @ 150μA
- Supplier Device Package :
- 8-PQFN (5x6)
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 2.4mOhm @ 50A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Series :
- HEXFET®
- Radiation Hardening :
- No
- Datasheets
- IRLH5034TR2PBF

N-Channel Cut Tape (CT) 2.4mOhm @ 50A, 10V 4730pF @ 25V 82nC @ 10V 40V 8-PowerVDFN
IRLH5034TR2PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4730pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 2.7mOhm.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.To operate this transistor, you will need a 40V drain to source voltage (Vdss).
IRLH5034TR2PBF Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 2.7mOhm
a threshold voltage of 1V
a 40V drain to source voltage (Vdss)
IRLH5034TR2PBF Applications
There are a lot of Infineon Technologies
IRLH5034TR2PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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