IRLH5034TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-PQFN (5x6)

Drain to Source Resistance :

2.7MOhm

Vgs(th) (Max) @ Id :

2.5V @ 150μA

Nominal Vgs :

1 V

Package / Case :

8-PowerVDFN

Continuous Drain Current (ID) :

100A

Max Power Dissipation :

3.6W

Turn On Delay Time :

21 ns

FET Type :

N-Channel

Number of Pins :

8

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Recovery Time :

38 ns

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

156W

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 50A, 10V

Length :

5mm

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Rise Time :

54ns

Current - Continuous Drain (Id) @ 25°C :

29A Ta 100A Tc

Mounting Type :

Surface Mount

Number of Elements :

1

Rds On Max :

2.4 mΩ

Turn-Off Delay Time :

31 ns

Width :

5.1562mm

Packaging :

Cut Tape (CT)

Series :

HEXFET®

Published :

2013

Drain to Source Breakdown Voltage :

40V

Input Capacitance :

4.73nF

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Height :

810μm

Fall Time (Typ) :

21 ns

Threshold Voltage :

1V

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 25V