IRLHM630TR2PBF
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- Mfr.Part #
- IRLHM630TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-VQFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A PQFN
- Stock
- 23,355
- In Stock ：
- 23,355
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Recovery Time :
- 30 ns
- Max Power Dissipation :
- 2.7W
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Height :
- 990.6μm
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 37W
- Series :
- HEXFET®
- Length :
- 3.2766mm
- Fall Time (Typ) :
- 43 ns
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 40A Tc
- Number of Elements :
- 1
- Number of Pins :
- 8
- Width :
- 3.3mm
- Turn-Off Delay Time :
- 65 ns
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 3170pF @ 25V
- Nominal Vgs :
- 800 mV
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 30V
- Min Operating Temperature :
- -55°C
- Rise Time :
- 32ns
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 20A, 4.5V
- Turn On Delay Time :
- 9.1 ns
- Package / Case :
- 8-VQFN Exposed Pad
- Continuous Drain Current (ID) :
- 21A
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.1V @ 50μA
- Gate to Source Voltage (Vgs) :
- 12V
- Max Operating Temperature :
- 150°C
- Datasheets
- IRLHM630TR2PBF
N-Channel Cut Tape (CT) 3.5m Ω @ 20A, 4.5V 3170pF @ 25V 62nC @ 4.5V 8-VQFN Exposed Pad
IRLHM630TR2PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3170pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 21A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.
IRLHM630TR2PBF Features
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65 ns
IRLHM630TR2PBF Applications
There are a lot of Infineon Technologies
IRLHM630TR2PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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