IRLHM620TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

20V

Terminal Position :

Dual

Height :

990.6μm

Series :

HEXFET®

Resistance :

3.5mOhm

Radiation Hardening :

No

JESD-30 Code :

S-PDSO-N5

Fall Time (Typ) :

37 ns

Additional Feature :

High Reliability

Nominal Vgs :

800 mV

Case Connection :

DRAIN

Power Dissipation-Max :

2.7W Ta 37W Tc

Length :

3.2766mm

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.1V @ 50μA

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 4.5V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Width :

3.3mm

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

REACH SVHC :

No SVHC

Power Dissipation :

37W

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

26A

Element Configuration :

Single

Package / Case :

8-PowerTDFN

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Turn-Off Delay Time :

57 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3620pF @ 10V

Turn On Delay Time :

7.5 ns

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

26A Ta 40A Tc

Published :

2009

Rise Time :

25ns

Factory Lead Time :

12 Weeks

Threshold Voltage :

800mV

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 20A, 4.5V