IRLH6224TR2PBF
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- Mfr.Part #
- IRLH6224TR2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N CH 20V 28A PQFN 5X6 MM
- Stock
- 24,933
- In Stock ：
- 24,933
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerTDFN
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 36 ns
- Nominal Vgs :
- 800 mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 67 ns
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3710pF @ 10V
- Rise Time :
- 23ns
- Mount :
- Surface Mount
- Supplier Device Package :
- 8-PQFN (5x6)
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 3.6W
- Gate to Source Voltage (Vgs) :
- 12V
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 20A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta 105A Tc
- Drain to Source Breakdown Voltage :
- 20V
- Turn On Delay Time :
- 9.4 ns
- Input Capacitance :
- 3.71nF
- Packaging :
- Cut Tape (CT)
- Drain to Source Resistance :
- 3mOhm
- Resistance :
- 3mOhm
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 3.6W
- Recovery Time :
- 57 ns
- Continuous Drain Current (ID) :
- 28A
- Threshold Voltage :
- 800mV
- Rds On Max :
- 3 mΩ
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 1.1V @ 50μA
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- IRLH6224TR2PBF
N-Channel Cut Tape (CT) 3mOhm @ 20A, 4.5V 3710pF @ 10V 86nC @ 10V 20V 8-PowerTDFN
IRLH6224TR2PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3710pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 67 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 800mV.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.
IRLH6224TR2PBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 67 ns
single MOSFETs transistor is 3mOhm
a threshold voltage of 800mV
a 20V drain to source voltage (Vdss)
IRLH6224TR2PBF Applications
There are a lot of Infineon Technologies
IRLH6224TR2PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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