IRLHS6376TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.1V @ 10μA

Element Configuration :

Dual

Turn On Delay Time :

4.4 ns

Supplier Device Package :

6-PQFN (2x2)

Radiation Hardening :

No

REACH SVHC :

No SVHC

Base Part Number :

IRLHS6376

Min Operating Temperature :

-55°C

Published :

2009

RoHS Status :

RoHS Compliant

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

1.5W

Packaging :

Cut Tape (CT)

Input Capacitance :

270pF

Drain to Source Voltage (Vdss) :

30V

Resistance :

63mOhm

Lead Free :

Lead Free

Power - Max :

1.5W

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 4.5V

Length :

2.1mm

Nominal Vgs :

800 mV

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

63mOhm @ 3.4A, 4.5V

Series :

HEXFET®

Drain to Source Resistance :

63mOhm

Height :

950μm

Rise Time :

11ns

Mount :

Surface Mount

Rds On Max :

63 mΩ

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

9.4 ns

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 25V

Recovery Time :

12 ns

Package / Case :

6-VDFN Exposed Pad

Power Dissipation :

6.6W

Current - Continuous Drain (Id) @ 25°C :

3.6A

Turn-Off Delay Time :

11 ns

Max Operating Temperature :

150°C

Threshold Voltage :

800mV

Width :

2.1mm

Continuous Drain Current (ID) :

3.6A