IRFP4368PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.87mm

Radiation Hardening :

No

Recovery Time :

200 ns

Mount :

Through Hole

Height :

20.7mm

ECCN Code :

EAR99

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

19230pF @ 50V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

570nC @ 10V

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

350A

Power Dissipation-Max :

520W Tc

Packaging :

Tube

Series :

HEXFET®

Termination :

Through Hole

Package / Case :

TO-247-3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

75V

JEDEC-95 Code :

TO-247AC

Turn-Off Delay Time :

170 ns

Number of Pins :

3

Rise Time :

220ns

Width :

5.3086mm

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

1.85m Ω @ 195A, 10V

Number of Elements :

1

Published :

2008

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Turn On Delay Time :

43 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Number of Terminations :

3

Mounting Type :

Through Hole

Nominal Vgs :

4 V

RoHS Status :

ROHS3 Compliant

Resistance :

1.85mOhm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

260 ns

Power Dissipation :

520W

Transistor Element Material :

SILICON

Dual Supply Voltage :

75V