IRFP054N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

DS Breakdown Voltage-Min :

55V

Number of Elements :

1

Transistor Element Material :

SILICON

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

360 mJ

FET Type :

N-Channel

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-247AC

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Rds On (Max) @ Id, Vgs :

12m Ω @ 43A, 10V

Terminal Position :

Single

Power Dissipation-Max :

170W Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

290A

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

RoHS Status :

Non-RoHS Compliant

Published :

1997

Drain-source On Resistance-Max :

0.012Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

81A