IRFP054NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

55V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Fall Time (Typ) :

46 ns

Current Rating :

72A

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

12m Ω @ 43A, 10V

Threshold Voltage :

4V

Resistance :

12mOhm

Recovery Time :

120 ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Turn-Off Delay Time :

40 ns

Width :

5.3086mm

Voltage - Rated DC :

55V

Mounting Type :

Through Hole

Rise Time :

66ns

Factory Lead Time :

12 Weeks

Power Dissipation :

130W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Pins :

3

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

290A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Lead Pitch :

5.45mm

Case Connection :

DRAIN

Lead Free :

Contains Lead, Lead Free

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Power Dissipation-Max :

170W Tc

Length :

15.87mm

Packaging :

Bulk

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

11 ns

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-247AC

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

81A

Element Configuration :

Single

Transistor Element Material :

SILICON

Nominal Vgs :

4 V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Height :

20.7mm