IRFP044N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-247-3

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Series :

HEXFET®

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

120W Tc

Published :

1997

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

180A

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AC

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

49A

Rds On (Max) @ Id, Vgs :

20m Ω @ 29A, 10V

Avalanche Energy Rating (Eas) :

230 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.02Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V