IRFP048NPBF

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Mfr.Part #
IRFP048NPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IRFP048 - 12V-300V N-CHANNEL POW
Stock
63,262
In Stock :
63,262

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Dual Supply Voltage :
55V
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
JEDEC-95 Code :
TO-247AC
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Factory Lead Time :
10 Weeks
Length :
15.875mm
Avalanche Energy Rating (Eas) :
270 mJ
Threshold Voltage :
4V
Mounting Type :
Through Hole
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Radiation Hardening :
No
Packaging :
Bulk
Package / Case :
TO-247-3
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
62A
Operating Temperature :
-55°C~175°C TJ
Rise Time :
78ns
Power Dissipation :
130W
Height :
20.3mm
Continuous Drain Current (ID) :
64A
Transistor Element Material :
SILICON
Voltage - Rated DC :
55V
Nominal Vgs :
4 V
Turn On Delay Time :
11 ns
Drain to Source Breakdown Voltage :
55V
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
89nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
Lead Pitch :
5.45mm
FET Type :
N-Channel
Turn-Off Delay Time :
32 ns
Gate to Source Voltage (Vgs) :
20V
Published :
1997
Vgs (Max) :
±20V
Current Rating :
36A
Recovery Time :
140 ns
Fall Time (Typ) :
48 ns
Width :
5.3mm
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
16m Ω @ 37A, 10V
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Lead Free :
Contains Lead, Lead Free
Power Dissipation-Max :
140W Tc
Series :
HEXFET®
Datasheets
IRFP048NPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFP048NPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-55°C~175°C TJ, IRFP048NPBF pinout, IRFP048NPBF datasheet PDF, IRFP048NPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFP048NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFP048NPBF


N-Channel Bulk 16m Ω @ 37A, 10V ±20V 1900pF @ 25V 89nC @ 10V TO-247-3

IRFP048NPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 270 mJ.A device's maximum input capacitance is 1900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 64A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 62A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP048NPBF Features


the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V


IRFP048NPBF Applications


There are a lot of Infineon Technologies
IRFP048NPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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