IRFP048NPBF

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Mfr.Part #
IRFP048NPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 55V 64A TO247AC
Stock
63,262
In Stock :
63,262

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Contains Lead, Lead Free
Current Rating :
36A
Vgs (Max) :
±20V
Number of Terminations :
3
Series :
HEXFET®
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-247AC
Threshold Voltage :
4V
Packaging :
Bulk
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
78ns
Number of Elements :
1
Power Dissipation-Max :
140W Tc
REACH SVHC :
No SVHC
Dual Supply Voltage :
55V
Nominal Vgs :
4 V
FET Type :
N-Channel
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Power Dissipation :
130W
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Mount :
Through Hole
Recovery Time :
140 ns
Operating Temperature :
-55°C~175°C TJ
Avalanche Energy Rating (Eas) :
270 mJ
Factory Lead Time :
10 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
89nC @ 10V
Rds On (Max) @ Id, Vgs :
16m Ω @ 37A, 10V
Continuous Drain Current (ID) :
64A
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
Drain Current-Max (Abs) (ID) :
62A
Voltage - Rated DC :
55V
Length :
15.875mm
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Vgs(th) (Max) @ Id :
4V @ 250µA
ECCN Code :
EAR99
Turn-Off Delay Time :
32 ns
Turn On Delay Time :
11 ns
Drain to Source Breakdown Voltage :
55V
Width :
5.3mm
Fall Time (Typ) :
48 ns
Lead Pitch :
5.45mm
Height :
20.3mm
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Published :
1997
Number of Pins :
3
Radiation Hardening :
No
Datasheets
IRFP048NPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFP048NPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, IRFP048NPBF pinout, IRFP048NPBF datasheet PDF, IRFP048NPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFP048NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFP048NPBF


N-Channel Bulk 16m Ω @ 37A, 10V ±20V 1900pF @ 25V 89nC @ 10V TO-247-3

IRFP048NPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 270 mJ.A device's maximum input capacitance is 1900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 64A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 62A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP048NPBF Features


the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V


IRFP048NPBF Applications


There are a lot of Infineon Technologies
IRFP048NPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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