IRFP048N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

Operating Temperature :

-55°C~175°C TJ

Packaging :

Bulk

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

64A

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.016Ohm

Power Dissipation-Max :

140W Tc

JEDEC-95 Code :

TO-247AC

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

270 mJ

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

210A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

FET Type :

N-Channel

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

16m Ω @ 37A, 10V

Case Connection :

DRAIN

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

55V

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED