IRFP064NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Resistance :

8mOhm

Termination :

Through Hole

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

55V

ECCN Code :

EAR99

Packaging :

Tube

Current Rating :

110A

Operating Temperature :

-55°C~175°C TJ

Lead Pitch :

5.45mm

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AC

Avalanche Energy Rating (Eas) :

480 mJ

Drain to Source Breakdown Voltage :

55V

Drain Current-Max (Abs) (ID) :

98A

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

RoHS Status :

ROHS3 Compliant

Length :

15.875mm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Fall Time (Typ) :

70 ns

Power Dissipation-Max :

200W Tc

Continuous Drain Current (ID) :

110A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

100ns

Nominal Vgs :

4 V

Width :

5.3mm

Recovery Time :

170 ns

Number of Channels :

1

Max Junction Temperature (Tj) :

175°C

Turn-Off Delay Time :

43 ns

Published :

1997

Height :

24.99mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Rds On (Max) @ Id, Vgs :

8m Ω @ 59A, 10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Mounting Type :

Through Hole

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

FET Type :

N-Channel

Mount :

Through Hole

Number of Elements :

1

REACH SVHC :

No SVHC

Series :

HEXFET®

Element Configuration :

Single

Dual Supply Voltage :

55V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Power Dissipation :

150W