IRFP044NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Rise Time :

80ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Fall Time (Typ) :

52 ns

Height :

20.7mm

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Number of Terminations :

3

Factory Lead Time :

10 Weeks

Element Configuration :

Single

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

55V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Peak Reflow Temperature (Cel) :

250

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

49A

Power Dissipation-Max :

120W Tc

Continuous Drain Current (ID) :

53A

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

JESD-609 Code :

e3

Dual Supply Voltage :

55V

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-247AC

Time@Peak Reflow Temperature-Max (s) :

30

Width :

5.3086mm

Vgs (Max) :

±20V

Radiation Hardening :

No

Voltage - Rated DC :

55V

Nominal Vgs :

4 V

Current Rating :

53A

Lead Pitch :

5.45mm

Package / Case :

TO-247-3

Number of Elements :

1

Drain-source On Resistance-Max :

0.02Ohm

Number of Pins :

3

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Through Hole

Transistor Application :

SWITCHING

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Recovery Time :

110 ns

Operating Temperature :

-55°C~175°C TJ

Packaging :

Bulk

Length :

15.87mm

Rds On (Max) @ Id, Vgs :

20m Ω @ 29A, 10V

Power Dissipation :

100W

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Number of Channels :

1

Series :

HEXFET®

Turn-Off Delay Time :

43 ns