IRFP048NPBF

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Mfr.Part #
IRFP048NPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
HEXFET POWER MOSFET
Stock
63,262
In Stock :
63,262

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-247-3
Power Dissipation :
130W
Turn-Off Delay Time :
32 ns
Length :
15.875mm
REACH SVHC :
No SVHC
Rise Time :
78ns
Transistor Element Material :
SILICON
Width :
5.3mm
Radiation Hardening :
No
Threshold Voltage :
4V
Rds On (Max) @ Id, Vgs :
16m Ω @ 37A, 10V
JEDEC-95 Code :
TO-247AC
Power Dissipation-Max :
140W Tc
Dual Supply Voltage :
55V
Gate Charge (Qg) (Max) @ Vgs :
89nC @ 10V
Current Rating :
36A
Mount :
Through Hole
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) :
270 mJ
Turn On Delay Time :
11 ns
Case Connection :
DRAIN
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
55V
Mounting Type :
Through Hole
Published :
1997
Packaging :
Bulk
Lead Free :
Contains Lead, Lead Free
Drain Current-Max (Abs) (ID) :
62A
Continuous Drain Current (ID) :
64A
Current - Continuous Drain (Id) @ 25°C :
64A Tc
Transistor Application :
SWITCHING
Number of Pins :
3
Nominal Vgs :
4 V
Height :
20.3mm
Number of Elements :
1
Lead Pitch :
5.45mm
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Breakdown Voltage :
55V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 25V
Number of Terminations :
3
Vgs (Max) :
±20V
FET Type :
N-Channel
Factory Lead Time :
10 Weeks
Fall Time (Typ) :
48 ns
Series :
HEXFET®
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Recovery Time :
140 ns
RoHS Status :
ROHS3 Compliant
Datasheets
IRFP048NPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRFP048NPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IRFP048NPBF pinout, IRFP048NPBF datasheet PDF, IRFP048NPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRFP048NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRFP048NPBF


N-Channel Bulk 16m Ω @ 37A, 10V ±20V 1900pF @ 25V 89nC @ 10V TO-247-3

IRFP048NPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 270 mJ.A device's maximum input capacitance is 1900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 64A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 62A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFP048NPBF Features


the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V


IRFP048NPBF Applications


There are a lot of Infineon Technologies
IRFP048NPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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