IRFP048RPBF
- Mfr.Part #
- IRFP048RPBF
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 70A TO247-3
- Stock
- 9,648
- In Stock :
- 9,648
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 18mOhm
- Drain to Source Breakdown Voltage :
- 60V
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Nominal Vgs :
- 4 V
- Turn On Delay Time :
- 8.1 ns
- Length :
- 15.87mm
- Input Capacitance :
- 2.4nF
- Supplier Device Package :
- TO-247-3
- Packaging :
- Tube
- Fall Time (Typ) :
- 250 ns
- Published :
- 2015
- Radiation Hardening :
- No
- Rise Time :
- 250ns
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 70A
- Turn-Off Delay Time :
- 210 ns
- Power Dissipation-Max :
- 190W Tc
- FET Type :
- N-Channel
- Rds On Max :
- 18 mΩ
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 20.7mm
- Threshold Voltage :
- 4V
- Power Dissipation :
- 190W
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- Unknown
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 38.000013g
- Max Operating Temperature :
- 175°C
- Width :
- 5.31mm
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 25V
- Element Configuration :
- Single
- Datasheets
- IRFP048RPBF

N-Channel Tube 18mOhm @ 44A, 10V ±20V 2400pF @ 25V 110nC @ 10V 60V TO-247-3
IRFP048RPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 70A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 210 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 18mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFP048RPBF Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 210 ns
single MOSFETs transistor is 18mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFP048RPBF Applications
There are a lot of Vishay Siliconix
IRFP048RPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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