IRFBG30

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Mount :

Through Hole

Fall Time (Typ) :

20 ns

Vgs (Max) :

±20V

Power Dissipation :

125W

Width :

4.7mm

Turn-Off Delay Time :

89 ns

Packaging :

Tube

Current Rating :

3.1A

Drain to Source Breakdown Voltage :

1kV

Length :

10.41mm

Turn On Delay Time :

12 ns

Supplier Device Package :

TO-220AB

Rise Time :

25ns

Voltage - Rated DC :

1kV

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Contains Lead

Power Dissipation-Max :

125W Tc

Height :

9.01mm

FET Type :

N-Channel

Drain to Source Resistance :

5Ohm

RoHS Status :

Non-RoHS Compliant

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

980pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Nominal Vgs :

4 V

Input Capacitance :

980pF

Number of Channels :

1

Rds On Max :

5 Ω

Package / Case :

TO-220-3

Max Operating Temperature :

150°C

Number of Elements :

1

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

5Ohm @ 1.9A, 10V

Published :

2014

Number of Pins :

3

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

1000V

Continuous Drain Current (ID) :

3.1A

Operating Temperature :

-55°C~150°C TJ