IRFBF20

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Mfr.Part #
IRFBF20
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 900V 1.7A TO220AB
Stock
4,040
In Stock :
4,040

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
8Ohm @ 1A, 10V
Width :
4.7mm
Weight :
6.000006g
Height :
9.01mm
Rds On Max :
8 Ω
Vgs (Max) :
±20V
Rise Time :
21ns
Current - Continuous Drain (Id) @ 25°C :
1.7A Tc
Power Dissipation :
54W
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
900V
Drain to Source Breakdown Voltage :
900V
Element Configuration :
Single
Turn-Off Delay Time :
56 ns
Length :
10.41mm
Package / Case :
TO-220-3
Max Operating Temperature :
150°C
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
3
Turn On Delay Time :
8 ns
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
490pF @ 25V
Fall Time (Typ) :
32 ns
Mounting Type :
Through Hole
Packaging :
Tube
Published :
2011
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
1.7A
Power Dissipation-Max :
54W Tc
Number of Elements :
1
Drain to Source Resistance :
8Ohm
Input Capacitance :
490pF
RoHS Status :
Non-RoHS Compliant
FET Type :
N-Channel
Supplier Device Package :
TO-220AB
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Datasheets
IRFBF20
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBF20 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, IRFBF20 pinout, IRFBF20 datasheet PDF, IRFBF20 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBF20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBF20


N-Channel Tube 8Ohm @ 1A, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-220-3

IRFBF20 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 490pF @ 25V.This device has a continuous drain current (ID) of [1.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=900V, the drain-source breakdown voltage is 900V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 56 ns.MOSFETs have 8Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFBF20 Features


a continuous drain current (ID) of 1.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 56 ns
single MOSFETs transistor is 8Ohm
a 900V drain to source voltage (Vdss)


IRFBF20 Applications


There are a lot of Vishay Siliconix
IRFBF20 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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