IRFBE30SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

D2PAK

Published :

2015

Power Dissipation :

125W

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Operating Temperature :

150°C

Height :

4.83mm

Input Capacitance :

1.3nF

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

800V

Weight :

1.437803g

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

Continuous Drain Current (ID) :

4.1A

Element Configuration :

Single

Vgs (Max) :

±20V

FET Type :

N-Channel

Number of Channels :

1

Radiation Hardening :

No

Resistance :

3Ohm

Fall Time (Typ) :

30 ns

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Length :

10.67mm

Turn-Off Delay Time :

82 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Width :

9.65mm

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

3Ohm

Rds On Max :

3 Ω

Rds On (Max) @ Id, Vgs :

3Ohm @ 2.5A, 10V

Turn On Delay Time :

12 ns

Rise Time :

33ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

125W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)