IRFBE30LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

4.1A

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Rise Time :

33ns

Turn-Off Delay Time :

82 ns

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

4.1A Tc

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Rds On Max :

3 Ω

Element Configuration :

Single

Width :

4.83mm

Power Dissipation-Max :

125W Tc

Supplier Device Package :

I2PAK

Radiation Hardening :

No

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Mount :

Through Hole

Height :

9.65mm

Drain to Source Resistance :

3Ohm

Vgs (Max) :

±20V

Input Capacitance :

1.3nF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Number of Channels :

1

Turn On Delay Time :

12 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Length :

10.67mm

Weight :

2.387001g

Drain to Source Voltage (Vdss) :

800V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Fall Time (Typ) :

30 ns

Resistance :

3Ohm

Rds On (Max) @ Id, Vgs :

3Ohm @ 2.5A, 10V