IRFBC40STRR

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

225

Pulsed Drain Current-Max (IDM) :

25A

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

DS Breakdown Voltage-Min :

600V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Number of Elements :

1

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Mount :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

570 mJ

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.1W Ta 130W Tc

Pin Count :

3

Published :

2016

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Transistor Application :

SWITCHING

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.7A, 10V

Continuous Drain Current (ID) :

6.2A