IRFBC30PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Published :

2007

Radiation Hardening :

No

Fall Time (Typ) :

14 ns

Supplier Device Package :

TO-220AB

Weight :

6.000006g

Rds On Max :

2.2 Ω

Max Operating Temperature :

150°C

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Package / Case :

TO-220-3

Power Dissipation :

74W

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

Unknown

Current :

44A

Packaging :

Tube

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Vgs (Max) :

±20V

Voltage :

600V

Input Capacitance :

660pF

Rds On (Max) @ Id, Vgs :

2.2Ohm @ 2.2A, 10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Recovery Time :

810 ns

Number of Channels :

1

Rise Time :

13ns

Resistance :

2.2Ohm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

74W Tc

Length :

10.41mm

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Min Operating Temperature :

-55°C

Turn On Delay Time :

11 ns

Lead Free :

Lead Free

Drain to Source Resistance :

2.2Ohm

Factory Lead Time :

11 Weeks

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

600V

Mount :

Through Hole

Height :

9.01mm

Element Configuration :

Single

Continuous Drain Current (ID) :

3.6A

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

35 ns