IRFBC30A

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Mfr.Part #
IRFBC30A
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 3.6A TO220AB
Stock
8,045
In Stock :
8,045

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.41mm
Height :
9.01mm
RoHS Status :
Non-RoHS Compliant
Drain to Source Breakdown Voltage :
600V
Input Capacitance :
510pF
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Fall Time (Typ) :
12 ns
Min Operating Temperature :
-55°C
Number of Channels :
1
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Rds On (Max) @ Id, Vgs :
2.2Ohm @ 2.2A, 10V
Number of Pins :
3
Weight :
6.000006g
Published :
2016
Continuous Drain Current (ID) :
3.6A
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Supplier Device Package :
TO-220AB
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Width :
4.7mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-220-3
Rise Time :
13ns
Max Operating Temperature :
150°C
Power Dissipation-Max :
74W Tc
Turn-Off Delay Time :
19 ns
Drain to Source Resistance :
2.2Ohm
FET Type :
N-Channel
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Rds On Max :
2.2 Ω
Mounting Type :
Through Hole
Turn On Delay Time :
9.8 ns
Drain to Source Voltage (Vdss) :
600V
Datasheets
IRFBC30A
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBC30A from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, IRFBC30A pinout, IRFBC30A datasheet PDF, IRFBC30A amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBC30A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBC30A


N-Channel Tube 2.2Ohm @ 2.2A, 10V ±30V 510pF @ 25V 23nC @ 10V 600V TO-220-3

IRFBC30A Overview


The maximum input capacitance of this device is 510pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.6A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 2.2Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRFBC30A Features


a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)


IRFBC30A Applications


There are a lot of Vishay Siliconix
IRFBC30A applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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