IRFBC30

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Mfr.Part #
IRFBC30
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 3.6A TO220AB
Stock
10,740
In Stock :
10,740

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
2.2 Ω
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Current Rating :
3.6A
Drain to Source Voltage (Vdss) :
600V
Packaging :
Tube
FET Type :
N-Channel
RoHS Status :
Non-RoHS Compliant
Drain to Source Breakdown Voltage :
600V
Continuous Drain Current (ID) :
3.6A
Max Operating Temperature :
150°C
Turn On Delay Time :
11 ns
Lead Free :
Contains Lead
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 25V
Number of Elements :
1
Power Dissipation-Max :
74W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Input Capacitance :
660pF
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
600V
Operating Temperature :
-55°C~150°C TJ
Width :
4.7mm
Vgs (Max) :
±20V
Supplier Device Package :
TO-220AB
Turn-Off Delay Time :
35 ns
Rise Time :
13ns
Height :
9.01mm
Number of Pins :
3
Drain to Source Resistance :
2.2Ohm
Mounting Type :
Through Hole
Published :
2011
Length :
10.41mm
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
2.2Ohm @ 2.2A, 10V
Weight :
6.000006g
Current - Continuous Drain (Id) @ 25°C :
3.6A Tc
Package / Case :
TO-220-3
Power Dissipation :
74W
Number of Channels :
1
Element Configuration :
Single
Fall Time (Typ) :
14 ns
Datasheets
IRFBC30
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBC30 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1, IRFBC30 pinout, IRFBC30 datasheet PDF, IRFBC30 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBC30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBC30


N-Channel Tube 2.2Ohm @ 2.2A, 10V ±20V 660pF @ 25V 31nC @ 10V 600V TO-220-3

IRFBC30 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 660pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFBC30 Features


a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)


IRFBC30 Applications


There are a lot of Vishay Siliconix
IRFBC30 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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