IRFBC30
- Mfr.Part #
- IRFBC30
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 3.6A TO220AB
- Stock
- 10,740
- In Stock :
- 10,740
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 2.2 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 3.6A
- Drain to Source Voltage (Vdss) :
- 600V
- Packaging :
- Tube
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Continuous Drain Current (ID) :
- 3.6A
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 11 ns
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 25V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 74W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 660pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.7mm
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-220AB
- Turn-Off Delay Time :
- 35 ns
- Rise Time :
- 13ns
- Height :
- 9.01mm
- Number of Pins :
- 3
- Drain to Source Resistance :
- 2.2Ohm
- Mounting Type :
- Through Hole
- Published :
- 2011
- Length :
- 10.41mm
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 2.2Ohm @ 2.2A, 10V
- Weight :
- 6.000006g
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A Tc
- Package / Case :
- TO-220-3
- Power Dissipation :
- 74W
- Number of Channels :
- 1
- Element Configuration :
- Single
- Fall Time (Typ) :
- 14 ns
- Datasheets
- IRFBC30
N-Channel Tube 2.2Ohm @ 2.2A, 10V ±20V 660pF @ 25V 31nC @ 10V 600V TO-220-3
IRFBC30 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 660pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFBC30 Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30 Applications
There are a lot of Vishay Siliconix
IRFBC30 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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