IRFBC20S

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Mfr.Part #
IRFBC20S
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 2.2A D2PAK
Stock
7,637
In Stock :
7,637

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Voltage - Rated DC :
600V
Supplier Device Package :
D2PAK
Weight :
1.437803g
Rise Time :
23ns
Vgs (Max) :
±20V
Published :
2017
Length :
10.67mm
Drain to Source Voltage (Vdss) :
600V
Drain to Source Resistance :
4.4Ohm
Min Operating Temperature :
-55°C
Fall Time (Typ) :
25 ns
Input Capacitance :
350pF
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Current Rating :
2.2A
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
2.2A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Contains Lead
Height :
4.83mm
Rds On (Max) @ Id, Vgs :
4.4Ohm @ 1.3A, 10V
Continuous Drain Current (ID) :
2.2A
Rds On Max :
4.4 Ω
Width :
9.65mm
Turn-Off Delay Time :
30 ns
Number of Pins :
3
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max :
3.1W Ta 50W Tc
Max Operating Temperature :
150°C
Turn On Delay Time :
10 ns
Packaging :
Tube
RoHS Status :
Non-RoHS Compliant
Datasheets
IRFBC20S
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBC20S from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRFBC20S pinout, IRFBC20S datasheet PDF, IRFBC20S amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBC20S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBC20S


N-Channel Tube 4.4Ohm @ 1.3A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFBC20S Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 4.4Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFBC20S Features


a continuous drain current (ID) of 2.2A
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a 600V drain to source voltage (Vdss)


IRFBC20S Applications


There are a lot of Vishay Siliconix
IRFBC20S applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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