IRFBC20L
- Mfr.Part #
- IRFBC20L
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 2.2A I2PAK
- Stock
- 47,087
- In Stock :
- 47,087
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Packaging :
- Tube
- Element Configuration :
- Single
- Width :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 23ns
- RoHS Status :
- Non-RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2017
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 4.4Ohm @ 1.3A, 10V
- Drain to Source Resistance :
- 4.4Ohm
- Height :
- 9.65mm
- Supplier Device Package :
- I2PAK
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Power Dissipation-Max :
- 3.1W Ta 50W Tc
- Fall Time (Typ) :
- 25 ns
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Input Capacitance :
- 350pF
- Turn On Delay Time :
- 10 ns
- Length :
- 10.67mm
- Continuous Drain Current (ID) :
- 2.2A
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 4.4 Ω
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 2.2A
- Turn-Off Delay Time :
- 30 ns
- Mounting Type :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- FET Type :
- N-Channel
- Power Dissipation :
- 50W
- Weight :
- 2.387001g
- Datasheets
- IRFBC20L
N-Channel Tube 4.4Ohm @ 1.3A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFBC20L Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 350pF @ 25V.This device has a continuous drain current (ID) of [2.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.MOSFETs have 4.4Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFBC20L Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a 600V drain to source voltage (Vdss)
IRFBC20L Applications
There are a lot of Vishay Siliconix
IRFBC20L applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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