IRFBC20

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Mfr.Part #
IRFBC20
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 2.2A TO220AB
Stock
3,490
In Stock :
3,490

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
Non-RoHS Compliant
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
2.2A Tc
Turn-Off Delay Time :
30 ns
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
600V
Packaging :
Tube
Fall Time (Typ) :
25 ns
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Package / Case :
TO-220-3
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Height :
9.01mm
Mount :
Through Hole
Supplier Device Package :
TO-220AB
Lead Free :
Contains Lead
Operating Temperature :
-55°C~150°C TJ
Input Capacitance :
350pF
Vgs(th) (Max) @ Id :
4V @ 250µA
Width :
4.7mm
Turn On Delay Time :
10 ns
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Published :
2011
Min Operating Temperature :
-55°C
Drain to Source Breakdown Voltage :
600V
Rds On Max :
4.4 Ω
Weight :
6.000006g
Power Dissipation-Max :
50W Tc
Max Operating Temperature :
150°C
Number of Pins :
3
Number of Channels :
1
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Rise Time :
23ns
Length :
10.41mm
Current Rating :
2.2A
Rds On (Max) @ Id, Vgs :
4.4Ohm @ 1.3A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
600V
Drain to Source Resistance :
4.4Ohm
Continuous Drain Current (ID) :
2.2A
Datasheets
IRFBC20
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFBC20 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Channels:1, IRFBC20 pinout, IRFBC20 datasheet PDF, IRFBC20 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFBC20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFBC20


N-Channel Tube 4.4Ohm @ 1.3A, 10V ±20V 350pF @ 25V 18nC @ 10V 600V TO-220-3

IRFBC20 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 350pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 4.4Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFBC20 Features


a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 4.4Ohm
a 600V drain to source voltage (Vdss)


IRFBC20 Applications


There are a lot of Vishay Siliconix
IRFBC20 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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