IRFBA22N50APBF
- Mfr.Part #
- IRFBA22N50APBF
- Manufacturer
- Vishay
- Package / Case
- Super-220™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A SUPER-220
- Stock
- 7,950
- In Stock :
- 7,950
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Nominal Vgs :
- 4 V
- Published :
- 2002
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 46 ns
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3400pF @ 25V
- Package / Case :
- Super-220™
- Current Rating :
- 24A
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Terminal Finish :
- MATTE TIN
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 13.8A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 96A
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation :
- 340W
- Number of Pins :
- 3
- Resistance :
- 230Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 24A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 340W Tc
- Dual Supply Voltage :
- 500V
- Fall Time (Typ) :
- 44 ns
- Rise Time :
- 66ns
- Transistor Element Material :
- SILICON
- Datasheets
- IRFBA22N50APBF

N-Channel Tube 230m Ω @ 13.8A, 10V ±30V 3400pF @ 25V 115nC @ 10V Super-220™
IRFBA22N50APBF Overview
The maximum input capacitance of this device is 3400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 24A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 96A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IRFBA22N50APBF Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 96A.
IRFBA22N50APBF Applications
There are a lot of Vishay Siliconix
IRFBA22N50APBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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