IRFBA1405P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

95A

Drain-source On Resistance-Max :

0.005ohm

Published :

2002

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

Transistor Element Material :

SILICON

Package / Case :

TO-273AA

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

DS Breakdown Voltage-Min :

55V

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

330W Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

680A

Mounting Type :

Through Hole

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

5480pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

174A Tc

ECCN Code :

EAR99

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5m Ω @ 101A, 10V

Drain to Source Voltage (Vdss) :

55V

Operating Temperature :

-40°C~175°C TJ

Terminal Position :

Single

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

High Reliability

Avalanche Energy Rating (Eas) :

560 mJ