IRFBA1404PPBF

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Mfr.Part #
IRFBA1404PPBF
Manufacturer
Infineon Technologies
Package / Case
TO-273AA
Datasheet
Download
Description
MOSFET N-CH 40V 206A SUPER-220
Stock
34,223
In Stock :
34,223

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HEXFET®
Case Connection :
DRAIN
Turn-Off Delay Time :
72 ns
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Operating Temperature :
-40°C~175°C TJ
Number of Pins :
3
Lead Free :
Lead Free
Width :
5mm
RoHS Status :
ROHS3 Compliant
Current Rating :
206A
Number of Terminations :
3
Transistor Element Material :
SILICON
Number of Elements :
1
Resistance :
3.7mOhm
Published :
2004
Length :
10.9982mm
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
300W Tc
ECCN Code :
EAR99
Vgs (Max) :
±20V
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
650A
Current - Continuous Drain (Id) @ 25°C :
206A Tc
Package / Case :
TO-273AA
Input Capacitance (Ciss) (Max) @ Vds :
7360pF @ 25V
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
3.7m Ω @ 95A, 10V
Mount :
Through Hole
Continuous Drain Current (ID) :
206A
Turn On Delay Time :
17 ns
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC :
40V
Vgs(th) (Max) @ Id :
4V @ 250µA
Element Configuration :
Single
Rise Time :
140ns
Fall Time (Typ) :
26 ns
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Power Dissipation :
300W
Avalanche Energy Rating (Eas) :
480 mJ
Height :
15mm
Drain to Source Breakdown Voltage :
40V
Drain Current-Max (Abs) (ID) :
95A
Datasheets
IRFBA1404PPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFBA1404PPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-273AA, Mounting Type:Through Hole, IRFBA1404PPBF pinout, IRFBA1404PPBF datasheet PDF, IRFBA1404PPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFBA1404PPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFBA1404PPBF


N-Channel Tube 3.7m Ω @ 95A, 10V ±20V 7360pF @ 25V 200nC @ 10V TO-273AA

IRFBA1404PPBF Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7360pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 206A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 95A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 650A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFBA1404PPBF Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 206A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 650A.


IRFBA1404PPBF Applications


There are a lot of Infineon Technologies
IRFBA1404PPBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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