IRFBA1404P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

7360pF @ 25V

Mounting Type :

Through Hole

Published :

2010

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

206A Tc

Package / Case :

TO-273AA

Drain Current-Max (Abs) (ID) :

95A

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Series :

HEXFET®

Power Dissipation-Max :

300W Tc

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

650A

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

40V

ECCN Code :

EAR99

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0037Ohm

Transistor Element Material :

SILICON

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

40V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 95A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE