IRFBA1404

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

HEXFET®

Packaging :

Tube

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

206A Ta

Input Capacitance (Ciss) (Max) @ Vds :

7360pF @ 25V

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 95A, 10V

Drain Current-Max (Abs) (ID) :

212A

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

40V

Qualification Status :

Not Qualified

Operating Temperature (Max) :

175°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

2000 mJ

Drain-source On Resistance-Max :

0.0035Ohm

ECCN Code :

EAR99

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

40V

Number of Terminations :

3

Mounting Type :

Through Hole

FET Type :

N-Channel

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Package / Case :

TO-273AA

Pulsed Drain Current-Max (IDM) :

650A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE