IRFB9N65A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2016

Rds On (Max) @ Id, Vgs :

930mOhm @ 5.1A, 10V

Gate to Source Voltage (Vgs) :

30V

Width :

4.7mm

Rise Time :

20ns

Length :

10.41mm

Input Capacitance (Ciss) (Max) @ Vds :

1417pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Power Dissipation :

167W

Height :

9.01mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Operating Temperature :

150°C

Drain to Source Breakdown Voltage :

650V

Continuous Drain Current (ID) :

8.5A

Min Operating Temperature :

-55°C

Mount :

Through Hole

Input Capacitance :

1.417nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Voltage - Rated DC :

650V

FET Type :

N-Channel

Rds On Max :

930 mΩ

Fall Time (Typ) :

18 ns

Packaging :

Tube

Current Rating :

8.5A

Package / Case :

TO-220-3

Element Configuration :

Single

Turn-Off Delay Time :

34 ns

Supplier Device Package :

TO-220AB

Power Dissipation-Max :

167W Tc

Weight :

6.000006g

Mounting Type :

Through Hole

Drain to Source Resistance :

920mOhm

Drain to Source Voltage (Vdss) :

650V