IRFB9N60APBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Power Dissipation (Max) :

170W (Tc)

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

49 nC @ 10 V

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Mounting Type :

Through Hole

Supplier Device Package :

TO-220AB

Configuration :

Single

Brand :

Vishay / Siliconix

Product Type :

MOSFET

Channel Mode :

Enhancement

Base Product Number :

IRFB9

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Mounting Style :

Through Hole

Rise Time :

25 ns

Transistor Polarity :

N-Channel

FET Feature :

-

Number of Channels :

1 Channel

Series :

-

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Rds On (Max) @ Id, Vgs :

750mOhm @ 5.5A, 10V

Manufacturer :

Vishay

Current - Continuous Drain (Id) @ 25°C :

9.2A (Tc)

Package :

Tube

Subcategory :

MOSFETs

Vgs (Max) :

±30V

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

600 V

Packaging :

Tube

Transistor Type :

1 N-Channel