IRFB9N60APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9.2A

Rds On (Max) @ Id, Vgs :

750mOhm @ 5.5A, 10V

Width :

4.7mm

Power Dissipation-Max :

170W Tc

Height :

9.01mm

Number of Channels :

1

Voltage - Rated DC :

600V

Max Operating Temperature :

150°C

Element Configuration :

Single

Supplier Device Package :

TO-220AB

Turn-Off Delay Time :

30 ns

Drain to Source Voltage (Vdss) :

600V

Rise Time :

25ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2014

Package / Case :

TO-220-3

FET Type :

N-Channel

Mount :

Through Hole

Weight :

6.000006g

Resistance :

750mOhm

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.41mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Number of Pins :

3

Power Dissipation :

170W

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

Fall Time (Typ) :

22 ns

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Turn On Delay Time :

13 ns

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

REACH SVHC :

Unknown

Lead Free :

Lead Free

Input Capacitance :

1.4nF

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Current Rating :

9.2A

Drain to Source Resistance :

750mOhm

Nominal Vgs :

4 V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Rds On Max :

750 mΩ