IRFB812PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Threshold Voltage :

3V

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3

Factory Lead Time :

15 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Lead Free :

Lead Free

Element Configuration :

Single

Published :

2008

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

Number of Terminations :

3

Resistance :

2.2Ohm

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

78W

Turn-Off Delay Time :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

REACH SVHC :

No SVHC

Fall Time (Typ) :

17 ns

Turn On Delay Time :

14 ns

Recovery Time :

110 ns

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 2.2A, 10V

Length :

10.67mm

Height :

16.51mm

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.83mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Power Dissipation-Max :

78W Tc

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rise Time :

22ns

Vgs (Max) :

±20V

Radiation Hardening :

No

Continuous Drain Current (ID) :

3.6A