IRFB7740PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Width :

4.83mm

Published :

2013

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds :

4650pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Length :

10.67mm

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

75V

Fall Time (Typ) :

45 ns

Mount :

Through Hole

ECCN Code :

EAR99

Vgs (Max) :

±20V

Number of Pins :

3

Number of Channels :

1

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12 ns

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

StrongIRFET™

Continuous Drain Current (ID) :

87A

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Turn-Off Delay Time :

55 ns

Packaging :

Tube

Rise Time :

60ns

Mounting Type :

Through Hole

Power Dissipation-Max :

143W Tc

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 52A, 10V

Height :

16.51mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V