IRFB7546PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.7V @ 100μA

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3.7V

Width :

4.83mm

Rise Time :

51ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Height :

16.51mm

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Turn On Delay Time :

11 ns

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Packaging :

Tube

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

75A

Number of Elements :

1

Series :

HEXFET®, StrongIRFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

34 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

99W

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

7.3m Ω @ 45A, 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Tc

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Length :

10.67mm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Weight :

6.000006g

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

32 ns

Power Dissipation-Max :

99W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Published :

2013