IRFB7545PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

125W Tc

Mounting Type :

Through Hole

Turn On Delay Time :

12 ns

Power Dissipation :

125W

Number of Channels :

1

Series :

HEXFET®, StrongIRFET™

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

95A

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Weight :

6.000006g

Height :

16.51mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Length :

10.67mm

Factory Lead Time :

12 Weeks

Element Configuration :

Single

REACH SVHC :

No SVHC

Turn-Off Delay Time :

44 ns

Rise Time :

72ns

Threshold Voltage :

3.7V

Packaging :

Tube

Package / Case :

TO-220-3

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

60V

Width :

4.83mm

ECCN Code :

EAR99

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4010pF @ 25V

Fall Time (Typ) :

43 ns

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 57A, 10V