IRFB7537PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

105ns

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

84 ns

Power Dissipation :

230W

Number of Elements :

1

Number of Pins :

3

Package / Case :

TO-220-3

Length :

10.67mm

Element Configuration :

Single

Weight :

6.000006g

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.7V @ 150μA

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Avalanche Energy Rating (Eas) :

554 mJ

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

700A

Mount :

Through Hole

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

173A Tc

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Threshold Voltage :

3.7V

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

FET Type :

N-Channel

Width :

4.83mm

REACH SVHC :

No SVHC

Power Dissipation-Max :

230W Tc

Turn-Off Delay Time :

82 ns

Series :

HEXFET®, StrongIRFET™

Height :

16.51mm

Packaging :

Tube

Drain to Source Breakdown Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 25V

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 100A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

173A

Turn On Delay Time :

15 ns