IRFB7530PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Avalanche Energy Rating (Eas) :

1025 mJ

Rise Time :

141ns

Series :

HEXFET®, StrongIRFET™

Continuous Drain Current (ID) :

195A

Packaging :

Tube

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

13703pF @ 25V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3.7V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Length :

10.67mm

Gate Charge (Qg) (Max) @ Vgs :

411nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Mounting Type :

Through Hole

ECCN Code :

EAR99

Published :

2013

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

104 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

375W Tc

Factory Lead Time :

12 Weeks

Turn On Delay Time :

52 ns

Drain-source On Resistance-Max :

0.002Ohm

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Height :

16.51mm

Drain to Source Breakdown Voltage :

60V

Width :

4.83mm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Package / Case :

TO-220-3

Element Configuration :

Single

Weight :

6.000006g

Turn-Off Delay Time :

172 ns

Pulsed Drain Current-Max (IDM) :

760A

Transistor Element Material :

SILICON