IRFB7446PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

34ns

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Turn-Off Delay Time :

33 ns

ECCN Code :

EAR99

Nominal Vgs :

3 V

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Published :

2008

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

492A

Vgs (Max) :

±20V

Recovery Time :

22 ns

Package / Case :

TO-220-3

Turn On Delay Time :

11 ns

Packaging :

Tube

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

23 ns

Height :

16.51mm

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Width :

4.83mm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation :

99W

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

3183pF @ 25V

FET Type :

N-Channel

Continuous Drain Current (ID) :

120A

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 70A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

99W Tc

Transistor Element Material :

SILICON

Length :

10.67mm

Series :

HEXFET®, StrongIRFET™