IRFB7440PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

2.5MOhm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

115 ns

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 25V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Published :

2001

Nominal Vgs :

3 V

Continuous Drain Current (ID) :

120A

Width :

4.83mm

Number of Terminations :

3

Lead Free :

Lead Free

Recovery Time :

24 ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

772A

Height :

16.51mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

208W

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 100A, 10V

REACH SVHC :

No SVHC

Length :

10.67mm

Rise Time :

68ns

Transistor Application :

SWITCHING

Mount :

Through Hole

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Threshold Voltage :

3V

Series :

HEXFET®, StrongIRFET™

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

40V

Power Dissipation-Max :

143W Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Turn On Delay Time :

24 ns

Mounting Type :

Through Hole