IRFB7434PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Turn-Off Delay Time :

115 ns

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

10820pF @ 25V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

490 mJ

Continuous Drain Current (ID) :

195A

Power Dissipation-Max :

294W Tc

Width :

4.83mm

Mounting Type :

Through Hole

Packaging :

Tube

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Power Dissipation :

294W

Number of Pins :

3

Height :

16.51mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Length :

10.67mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

FET Type :

N-Channel

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Gate Charge (Qg) (Max) @ Vgs :

324nC @ 10V

Drain to Source Breakdown Voltage :

40V

Threshold Voltage :

3V

Recovery Time :

38 ns

Transistor Element Material :

SILICON

Resistance :

1.6mOhm

Lead Free :

Lead Free

Rise Time :

68ns

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Nominal Vgs :

3 V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Turn On Delay Time :

24 ns

ECCN Code :

EAR99

Package / Case :

TO-220-3

Mount :

Through Hole

Series :

HEXFET®, StrongIRFET™