IRFB59N10DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

3.8W Ta 200W Tc

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

59A

JESD-609 Code :

e3

Turn-Off Delay Time :

20 ns

Published :

2000

Mounting Type :

Through Hole

Threshold Voltage :

5.5V

Rise Time :

90ns

Nominal Vgs :

5.5 V

Termination :

Through Hole

Lead Free :

Lead Free

Radiation Hardening :

No

Mount :

Through Hole

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Transistor Application :

SWITCHING

Turn On Delay Time :

16 ns

Packaging :

Tube

Dual Supply Voltage :

100V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Fall Time (Typ) :

12 ns

REACH SVHC :

No SVHC

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Current Rating :

59A

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

250

Height :

8.763mm

ECCN Code :

EAR99

Width :

4.69mm

Rds On (Max) @ Id, Vgs :

25m Ω @ 35.4A, 10V

Voltage - Rated DC :

100V

Number of Elements :

1

Power Dissipation :

200W

Resistance :

25mOhm

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 25V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant